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RJH1CM5DPQ-E0#T2

Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube


  • Manufacturer: Renesas Electronics America
  • Nocochips NO: 668-RJH1CM5DPQ-E0#T2
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 158
  • Description: Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube (Kg)

Details

Tags

Parameters
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 245W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 30A
Reverse Recovery Time 200 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 58 ns
Test Condition 600V, 15A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 15A
Turn Off Time-Nom (toff) 225 ns
Gate Charge 74nC
Td (on/off) @ 25°C 40ns/100ns
Switching Energy 1.6mJ (on), 700μJ (off)
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 245W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
See Relate Datesheet

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