RJH1CV7DPQ-E0#T2
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 320W |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 320W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 70A |
| Reverse Recovery Time | 200 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Turn On Time | 98 ns |
| Test Condition | 600V, 35A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 35A |
| Turn Off Time-Nom (toff) | 465 ns |
| IGBT Type | Trench |
| Gate Charge | 166nC |
| Td (on/off) @ 25°C | 53ns/185ns |
| Switching Energy | 3.2mJ (on), 2.5mJ (off) |
| Gate-Emitter Thr Voltage-Max | 8V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
