banner_page

RJH60A01RDPD-A0#J2

Trans IGBT Chip N-CH 600V 10A 3-Pin TO-252A T/R


  • Manufacturer: Renesas Electronics America
  • Nocochips NO: 668-RJH60A01RDPD-A0#J2
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 110
  • Description: Trans IGBT Chip N-CH 600V 10A 3-Pin TO-252A T/R (Kg)

Details

Tags

Parameters
Switching Energy 130μJ (on), 70μJ (off)
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 29.4W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Element Configuration Single
Input Type Standard
Power - Max 29.4W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.3V
Max Collector Current 10A
Reverse Recovery Time 100 ns
Collector Emitter Breakdown Voltage 600V
Test Condition 300V, 5A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 5A
IGBT Type Trench
Gate Charge 11nC
Td (on/off) @ 25°C 30ns/40ns
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good