RJH60D1DPP-M0#T2
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2007 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 20.8W |
| Base Part Number | RJH60D |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Turn On Delay Time | 30 ns |
| Power - Max | 30W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 42 ns |
| Collector Emitter Voltage (VCEO) | 2.5V |
| Max Collector Current | 20A |
| Reverse Recovery Time | 70 ns |
| JEDEC-95 Code | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.6V |
| Turn On Time | 43 ns |
| Test Condition | 300V, 10A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 10A |
| Turn Off Time-Nom (toff) | 117 ns |
| IGBT Type | Trench |
| Gate Charge | 13nC |
| Td (on/off) @ 25°C | 30ns/42ns |
| Switching Energy | 100μJ (on), 130μJ (off) |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
