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RJH60D5BDPQ-E0#T2

IGBT 600V 75A 200W TO-247


  • Manufacturer: Renesas Electronics America
  • Nocochips NO: 668-RJH60D5BDPQ-E0#T2
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 925
  • Description: IGBT 600V 75A 200W TO-247 (Kg)

Details

Tags

Parameters
Operating Temperature 150°C TJ
Packaging Tube
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number RJH60D
Pin Count 3
Element Configuration Single
Input Type Standard
Power - Max 200W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 75A
Reverse Recovery Time 25 ns
Collector Emitter Breakdown Voltage 600V
Test Condition 300V, 37A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 37A
IGBT Type Trench
Gate Charge 78nC
Td (on/off) @ 25°C 50ns/130ns
Switching Energy 400μJ (on), 810μJ (off)
Gate-Emitter Thr Voltage-Max 6V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
See Relate Datesheet

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