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RJH60F5BDPQ-A0#T0

IGBT 600V 80A 260.4W TO-247A


  • Manufacturer: Renesas Electronics America
  • Nocochips NO: 668-RJH60F5BDPQ-A0#T0
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 935
  • Description: IGBT 600V 80A 260.4W TO-247A (Kg)

Details

Tags

Parameters
Published 2012
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 260.4W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number RJH60F
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 260.4W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 25 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 87 ns
Test Condition 400V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 40A
Turn Off Time-Nom (toff) 163 ns
IGBT Type Trench
Td (on/off) @ 25°C 53ns/95ns
Gate-Emitter Thr Voltage-Max 8V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
See Relate Datesheet

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