Parameters | |
---|---|
Published | 2012 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 260.4W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | RJH60F |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 260.4W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 80A |
Reverse Recovery Time | 25 ns |
Collector Emitter Breakdown Voltage | 600V |
Turn On Time | 87 ns |
Test Condition | 400V, 30A, 5 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 40A |
Turn Off Time-Nom (toff) | 163 ns |
IGBT Type | Trench |
Td (on/off) @ 25°C | 53ns/95ns |
Gate-Emitter Thr Voltage-Max | 8V |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |