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RJH60F7DPQ-A0#T0

IGBT 600V 90A 328.9W TO247A


  • Manufacturer: Renesas Electronics America
  • Nocochips NO: 668-RJH60F7DPQ-A0#T0
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 939
  • Description: IGBT 600V 90A 328.9W TO247A (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2011
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Max Power Dissipation 328.9W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number RJH60F
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 328.9W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.75V
Max Collector Current 90A
Reverse Recovery Time 90 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.6V
Turn On Time 144 ns
Test Condition 400V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 50A
Turn Off Time-Nom (toff) 216 ns
IGBT Type Trench
Td (on/off) @ 25°C 63ns/142ns
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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