banner_page

RJH65T46DPQ-A0#T0

IGBT TRENCH 650V 80A TO247A


  • Manufacturer: Renesas Electronics America
  • Nocochips NO: 668-RJH65T46DPQ-A0#T0
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 522
  • Description: IGBT TRENCH 650V 80A TO247A (Kg)

Details

Tags

Parameters
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Tube
Published 2017
Pbfree Code yes
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 340.9W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 100ns
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 80A
Turn On Time 75 ns
Test Condition 400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Turn Off Time-Nom (toff) 215 ns
IGBT Type Trench
Gate Charge 138nC
Td (on/off) @ 25°C 45ns/170ns
Switching Energy 450μJ (on), 550μJ (off)
RoHS Status ROHS3 Compliant
Mounting Type Through Hole
Package / Case TO-247-3
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good