RJP60V0DPM-00#T1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3PFM, SC-93-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 40W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Power - Max | 40W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.1V |
| Max Collector Current | 45A |
| Collector Emitter Breakdown Voltage | 600V |
| Turn On Time | 85 ns |
| Test Condition | 300V, 22A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 22A |
| Turn Off Time-Nom (toff) | 170 ns |
| IGBT Type | Trench |
| Gate Charge | 75nC |
| Td (on/off) @ 25°C | 45ns/100ns |
| Gate-Emitter Thr Voltage-Max | 7.5V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
