Parameters | |
---|---|
Operating Temperature (Max) | 150°C |
Number of Elements | 1 |
Configuration | SINGLE |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Diode Type | Schottky |
Current - Reverse Leakage @ Vr | 2mA @ 60V |
Voltage - Forward (Vf) (Max) @ If | 620mV @ 2A |
Case Connection | ISOLATED |
Operating Temperature - Junction | -40°C~150°C |
Output Current-Max | 2A |
Application | GENERAL PURPOSE |
Voltage - DC Reverse (Vr) (Max) | 60V |
Current - Average Rectified (Io) | 2A |
Number of Phases | 1 |
Non-rep Pk Forward Current-Max | 40A |
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | Axial |
Surface Mount | NO |
Diode Element Material | SILICON |
Packaging | Tape & Box (TB) |
Published | 2011 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
HTS Code | 8541.10.00.80 |
Terminal Form | WIRE |
JESD-30 Code | O-PALF-W2 |
Qualification Status | Not Qualified |