Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 2.4Ohm |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 10 |
Pin Count | 3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 200mW Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 200mW |
Turn On Delay Time | 3.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.4 Ω @ 250mA, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 15pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 250mA Ta |
Rise Time | 5ns |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 28 ns |
Turn-Off Delay Time | 18 ns |
Continuous Drain Current (ID) | 250mA |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 0.25A |
Drain to Source Breakdown Voltage | 60V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |