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RN1710JE(TE85L,F)

NPN X 2 BRT, Q1BSR=4.7K?, Q1BER=


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-RN1710JE(TE85L,F)
  • Package: SOT-553
  • Datasheet: -
  • Stock: 402
  • Description: NPN X 2 BRT, Q1BSR=4.7K?, Q1BER= (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SOT-553
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Number of Elements 2
Power - Max 100mW
Polarity/Channel Type NPN
Transistor Type 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Power Dissipation-Max (Abs) 0.1W
Resistor - Base (R1) 4.7k Ω
RoHS Status RoHS Compliant
See Relate Datesheet

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