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RN1903FE,LF(CT

NPNX2 BRT Q1BSR22KOHM Q1BER22KOH


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-RN1903FE,LF(CT
  • Package: SOT-563, SOT-666
  • Datasheet: -
  • Stock: 602
  • Description: NPNX2 BRT Q1BSR22KOHM Q1BER22KOH (Kg)

Details

Tags

Parameters
Power - Max 100mW
Transistor Type 2 NPN - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 22k Ω
Resistor - Emitter Base (R2) 22k Ω
RoHS Status Non-RoHS Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
See Relate Datesheet

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