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RN1905,LF(CT

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-RN1905,LF(CT
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 928
  • Description: Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Weight 6.010099mg
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Polarity NPN
Power - Max 200mW
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 5V
hFE Min 80
Resistor - Base (R1) 2.2kOhms
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47kOhms
RoHS Status RoHS Compliant
See Relate Datesheet

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