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RN1911FE,LF(CT

NPN X 2 BRT, Q1BSR=10K?, Q1BER=I


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-RN1911FE,LF(CT
  • Package: SOT-563, SOT-666
  • Datasheet: -
  • Stock: 852
  • Description: NPN X 2 BRT, Q1BSR=10K?, Q1BER=I (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 100mW
Transistor Type 2 NPN - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 10k Ω
See Relate Datesheet

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