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RN2605(TE85L,F)

Trans Digital BJT PNP 50V 100mA 6-Pin SM T/R


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-RN2605(TE85L,F)
  • Package: SC-74, SOT-457
  • Datasheet: PDF
  • Stock: 288
  • Description: Trans Digital BJT PNP 50V 100mA 6-Pin SM T/R (Kg)

Details

Tags

Parameters
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 2.2kOhms
Resistor - Emitter Base (R2) 47kOhms
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Supplier Device Package SM6
Packaging Tape & Reel (TR)
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Polarity PNP
Power - Max 300mW
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
See Relate Datesheet

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