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RN2904FE,LF

Trans GP BJT PNP 50V 0.1A 6-Pin ES Embossed T/R


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-RN2904FE,LF
  • Package: SOT-563, SOT-666
  • Datasheet: -
  • Stock: 176
  • Description: Trans GP BJT PNP 50V 0.1A 6-Pin ES Embossed T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Packaging Cut Tape (CT)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 100mW
Polarity PNP
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -10V
hFE Min 80
Resistor - Base (R1) 47k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 47k Ω
Height 550μm
Length 1.6mm
Width 1.2mm
RoHS Status RoHS Compliant
See Relate Datesheet

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