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RN2910FE,LF(CT

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-RN2910FE,LF(CT
  • Package: SOT-563, SOT-666
  • Datasheet: -
  • Stock: 535
  • Description: Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Weight 3.005049mg
Packaging Cut Tape (CT)
Published 2016
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Polarity PNP
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) -50V
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) -5V
hFE Min 120
Resistor - Base (R1) 4.7k Ω
Continuous Collector Current -100mA
RoHS Status RoHS Compliant
See Relate Datesheet

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