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RN4606(TE85L,F)

Bipolar Transistors - Pre-Biased BRT PNP NPN 100mA -50V


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-RN4606(TE85L,F)
  • Package: SC-74, SOT-457
  • Datasheet: -
  • Stock: 329
  • Description: Bipolar Transistors - Pre-Biased BRT PNP NPN 100mA -50V (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 300mW
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz 250MHz
Emitter Base Voltage (VEBO) 5V
hFE Min 80
Resistor - Base (R1) 4.7k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
See Relate Datesheet

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