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RN4902FE(TE85L,F)

TRANS NPN/PNP PREBIAS 0.1W ES6


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-RN4902FE(TE85L,F)
  • Package: SOT-563, SOT-666
  • Datasheet: -
  • Stock: 803
  • Description: TRANS NPN/PNP PREBIAS 0.1W ES6 (Kg)

Details

Tags

Parameters
Resistor - Emitter Base (R2) 10k Ω
RoHS Status RoHS Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Packaging Tape & Reel (TR)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 100mW
Reach Compliance Code unknown
Number of Elements 2
Polarity NPN, PNP
Number of Channels 2
Element Configuration Dual
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 10V
hFE Min 50
Resistor - Base (R1) 10k Ω
Continuous Collector Current 100mA
See Relate Datesheet

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