banner_page

RN4907FE,LF(CT

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-RN4907FE,LF(CT
  • Package: SOT-563, SOT-666
  • Datasheet: -
  • Stock: 119
  • Description: Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor (Kg)

Details

Tags

Parameters
Package / Case SOT-563, SOT-666
Weight 3.005049mg
Manufacturer Package Identifier SON6-P-0.50
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Max Power Dissipation 100mW
Number of Elements 2
Polarity NPN, PNP
Power Dissipation 100mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz 200MHz
Emitter Base Voltage (VEBO) 6V
hFE Min 80
Max Junction Temperature (Tj) 150°C
Resistor - Base (R1) 10k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
Height 600μm
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good