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RN4910,LF

Trans GP BJT NPN/PNP 50V 0.1A 6-Pin US Embossed T/R


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-RN4910,LF
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 566
  • Description: Trans GP BJT NPN/PNP 50V 0.1A 6-Pin US Embossed T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Supplier Device Package US6
Packaging Cut Tape (CT)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 200mW
Polarity NPN, PNP
Number of Channels 2
Power - Max 200mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Resistor - Base (R1) 4.7kOhms
Continuous Collector Current 100mA
Height 900μm
Length 2mm
Width 1.25mm
RoHS Status RoHS Compliant
See Relate Datesheet

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