RPI-0125
| Parameters | |
|---|---|
| Collector Emitter Breakdown Voltage | 30V |
| Wavelength | 950 nm |
| Sensing Method | Through-Beam |
| Max Breakdown Voltage | 30V |
| On-State Current-Max | 0.00495A |
| Dark Current-Max | 500nA |
| Slot Width-Nom | 1.2mm |
| On-state Collector Current-Nom | 0.45mA |
| Gap Size | 1.2mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | Slotted Module |
| Operating Temperature | -25°C~85°C |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Type | Unamplified |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Number of Functions | 1 |
| Output Configuration | Phototransistor |
| Power Dissipation | 80mW |
| Forward Current | 50mA |
| Response Time | 10μs, 10μs |
| Rise Time | 10μs |
| Fall Time (Typ) | 10 μs |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 30mA |
| Sensing Distance | 0.047 (1.2mm) |
See Relate Datesheet
