Parameters | |
---|---|
Collector Emitter Breakdown Voltage | 30V |
Wavelength | 950 nm |
Sensing Method | Through-Beam |
Max Breakdown Voltage | 30V |
Dark Current-Max | 500nA |
Slot Width-Nom | 0.8mm |
On-state Collector Current-Nom | 0.7mA |
Gap Size | 1mm |
Height | 3.3mm |
Length | 3.6mm |
Width | 2.6mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Copper, Silver, Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | PCB Mount |
Number of Pins | 4 |
Operating Temperature | -25°C~85°C |
Packaging | Bulk |
Published | 2005 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Type | Unamplified |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Number of Functions | 1 |
Output Configuration | Phototransistor |
Power Dissipation | 80mW |
Forward Current | 50mA |
Response Time | 10μs, 10μs |
Rise Time | 10μs |
Forward Voltage | 1.3V |
Fall Time (Typ) | 10 μs |
Collector Emitter Voltage (VCEO) | 30V |
Max Collector Current | 30mA |
Sensing Distance | 0.039 (1mm) |