Parameters | |
---|---|
Power Dissipation | 80mW |
Forward Current | 50mA |
Response Time | 10μs, 10μs |
Rise Time | 10μs |
Forward Voltage | 1.3V |
Fall Time (Typ) | 10 μs |
Collector Emitter Voltage (VCEO) | 30V |
Max Collector Current | 30mA |
Sensing Distance | 0.118 (3mm) |
Collector Emitter Breakdown Voltage | 30V |
Wavelength | 950 nm |
Sensing Method | Through-Beam |
Height | 5.4mm |
Length | 6.4mm |
Width | 4.2mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Copper, Silver, Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | PCB Mount |
Number of Pins | 352 |
Operating Temperature | -25°C~85°C |
Packaging | Bulk |
Published | 2005 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Type | Unamplified |
Voltage - Rated DC | 1.3V |
Max Power Dissipation | 80mW |
Number of Channels | 1 |
Output Configuration | Phototransistor |