Parameters | |
---|---|
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e2 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Copper (Sn/Cu) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 10 |
Pin Count | 6 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 320mW Ta |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 7 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 50m Ω @ 3.5A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 3.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 5V |
Rise Time | 9ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 40 ns |
Turn-Off Delay Time | 75 ns |
Continuous Drain Current (ID) | 3.5A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.05Ohm |
DS Breakdown Voltage-Min | 30V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-SMD, Flat Leads |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |