Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
JESD-609 Code | e2 |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Copper (Sn98Cu2) |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 20W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 20W |
Turn On Delay Time | 20 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 84m Ω @ 14A, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 14A Ta |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Rise Time | 45ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 110 ns |
Turn-Off Delay Time | 240 ns |
Continuous Drain Current (ID) | 14A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -60V |
Pulsed Drain Current-Max (IDM) | 28A |
Max Junction Temperature (Tj) | 150°C |
Height | 2.65mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |