RSF010P05TL
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, Flat Lead |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper (Sn/Cu) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 800mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 6 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 460m Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 5V |
| Rise Time | 4ns |
| Drain to Source Voltage (Vdss) | 45V |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 6 ns |
| Turn-Off Delay Time | 18 ns |
| Continuous Drain Current (ID) | 1A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 1A |
| Drain-source On Resistance-Max | 0.46Ohm |
| Drain to Source Breakdown Voltage | -45V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
