Parameters | |
---|---|
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 120m Ω @ 2A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 370pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 2A Ta |
Gate Charge (Qg) (Max) @ Vgs | 4.3nC @ 5V |
Rise Time | 10ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 11 ns |
Turn-Off Delay Time | 35 ns |
Continuous Drain Current (ID) | 2A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 2A |
Drain-source On Resistance-Max | 0.12Ohm |
Drain to Source Breakdown Voltage | -30V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SC-96 |
Number of Pins | 3 |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Subcategory | Other Transistors |
Voltage - Rated DC | -30V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -2A |
Time@Peak Reflow Temperature-Max (s) | 10 |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 1W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1W |
Turn On Delay Time | 8 ns |