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RSR030N06TL

MOSFET N-CH 60V 3A TSMT3


  • Manufacturer: ROHM Semiconductor
  • Nocochips NO: 687-RSR030N06TL
  • Package: SC-96
  • Datasheet: PDF
  • Stock: 305
  • Description: MOSFET N-CH 60V 3A TSMT3 (Kg)

Details

Tags

Parameters
Pin Count 3
Number of Elements 1
Power Dissipation-Max 540mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.105Ohm
Drain to Source Breakdown Voltage 60V
Height 950μm
Length 3mm
Width 1.8mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case SC-96
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
See Relate Datesheet

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