Parameters | |
---|---|
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.5 Ω @ 250mA, 4.5V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 250mA Ta |
Rise Time | 6ns |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 6 ns |
Turn-Off Delay Time | 35 ns |
Factory Lead Time | 1 Week |
Continuous Drain Current (ID) | 250mA |
Contact Plating | Copper, Silver, Tin |
Threshold Voltage | -700mV |
Mount | Surface Mount |
Gate to Source Voltage (Vgs) | 12V |
Mounting Type | Surface Mount |
Drain to Source Breakdown Voltage | -20V |
Package / Case | SC-70, SOT-323 |
Nominal Vgs | -700 mV |
Number of Pins | 3 |
Radiation Hardening | No |
REACH SVHC | No SVHC |
Transistor Element Material | SILICON |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2003 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 1.5Ohm |
Terminal Finish | TIN SILVER COPPER |
Subcategory | Other Transistors |
Voltage - Rated DC | -20V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -200mA |
Time@Peak Reflow Temperature-Max (s) | 10 |
Pin Count | 3 |
Number of Elements | 1 |
Voltage | 20V |
Power Dissipation-Max | 200mW Ta |
Element Configuration | Single |
Current | 25A |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 200mW |
Turn On Delay Time | 9 ns |