Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SC-75, SOT-416 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | TIN SILVER COPPER |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 10 |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 150mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 150mW |
Turn On Delay Time | 5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.2 Ω @ 200mA, 2.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 200mA Ta |
Rise Time | 10ns |
Drive Voltage (Max Rds On,Min Rds On) | 1.2V 2.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 10 ns |
Turn-Off Delay Time | 15 ns |
Continuous Drain Current (ID) | 200mA |
Gate to Source Voltage (Vgs) | 8V |
Drain Current-Max (Abs) (ID) | 0.2A |
Drain-source On Resistance-Max | 1.4Ohm |
Drain to Source Breakdown Voltage | 20V |
Height | 700μm |
Length | 1.6mm |
Width | 800μm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |