RUM002N02T2L
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper (Sn/Cu) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 150mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 150mW |
| Turn On Delay Time | 5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.2 Ω @ 200mA, 2.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 200mA Ta |
| Rise Time | 10ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.2V 2.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 200mA |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 0.2A |
| Drain-source On Resistance-Max | 1.4Ohm |
| Drain to Source Breakdown Voltage | 20V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
