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RUM002N05T2L

MOSFET N-CH 50V 0.2A 3VMT


  • Manufacturer: ROHM Semiconductor
  • Nocochips NO: 687-RUM002N05T2L
  • Package: SOT-723
  • Datasheet: PDF
  • Stock: 528
  • Description: MOSFET N-CH 50V 0.2A 3VMT (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 150mW
Turn On Delay Time 4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 25pF @ 10V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.2A
Drain-source On Resistance-Max 2.4Ohm
Drain to Source Breakdown Voltage 50V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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