Parameters | |
---|---|
Published | 2012 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 10 |
Pin Count | 6 |
Number of Elements | 1 |
Power Dissipation-Max | 600mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.25W |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 53m Ω @ 4A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 4A Ta |
Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 5V |
Rise Time | 15ns |
Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
Fall Time (Typ) | 15 ns |
Turn-Off Delay Time | 40 ns |
Continuous Drain Current (ID) | 4A |
Gate to Source Voltage (Vgs) | 21V |
Drain Current-Max (Abs) (ID) | 4A |
Drain-source On Resistance-Max | 0.074Ohm |
Drain to Source Breakdown Voltage | 45V |
Height | 950μm |
Length | 3mm |
Width | 1.8mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |