Parameters | |
---|---|
JESD-30 Code | R-PDSO-F3 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 150mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.2 Ω @ 200mA, 4.5V |
Vgs(th) (Max) @ Id | 800mV @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 26pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 200mA Ta |
Rise Time | 8ns |
Drive Voltage (Max Rds On,Min Rds On) | 0.9V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 43 ns |
Turn-Off Delay Time | 17 ns |
Continuous Drain Current (ID) | 200mA |
Gate to Source Voltage (Vgs) | 8V |
Drain Current-Max (Abs) (ID) | 0.2A |
Drain-source On Resistance-Max | 2.8Ohm |
Drain to Source Breakdown Voltage | 50V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
JESD-609 Code | e2 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Copper (Sn/Cu) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |