Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, Flat Lead |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2004 |
JESD-609 Code | e2 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 39MOhm |
Terminal Finish | Tin/Copper (Sn/Cu) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 10 |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 800mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 800mW |
Turn On Delay Time | 9 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 39m Ω @ 3A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 1860pF @ 6V |
Current - Continuous Drain (Id) @ 25°C | 3A Ta |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
Rise Time | 40ns |
Drain to Source Voltage (Vdss) | 12V |
Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
Vgs (Max) | ±10V |
Fall Time (Typ) | 120 ns |
Turn-Off Delay Time | 210 ns |
Continuous Drain Current (ID) | 3A |
Threshold Voltage | -300mV |
Gate to Source Voltage (Vgs) | 10V |
Drain Current-Max (Abs) (ID) | 3A |
Drain to Source Breakdown Voltage | -12V |
Nominal Vgs | -300 mV |
Height | 770μm |
Length | 2mm |
Width | 1.7mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |