RZM001P02T2L
| Parameters | |
|---|---|
| Published | 2005 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-F3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| Number of Channels | 1 |
| Power Dissipation-Max | 150mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 150W |
| Turn On Delay Time | 46 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.8 Ω @ 100mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 15pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 100mA Ta |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.2V 4.5V |
| Vgs (Max) | ±10V |
| Turn-Off Delay Time | 325 ns |
| Continuous Drain Current (ID) | 100mA |
| Gate to Source Voltage (Vgs) | 10V |
| Drain to Source Breakdown Voltage | -20V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 550μm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
See Relate Datesheet
