S1DHE3_A/I
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Additional Feature | FREE WHEELING DIODE |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | S1D |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PDSO-C2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 1μA @ 200V |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A |
| Operating Temperature - Junction | -55°C~150°C |
| Output Current-Max | 1A |
| Max Reverse Voltage (DC) | 200V |
| Average Rectified Current | 1A |
| Reverse Recovery Time | 1.8 μs |
| Max Repetitive Reverse Voltage (Vrrm) | 200V |
| Capacitance @ Vr, F | 12pF @ 4V 1MHz |
| Peak Non-Repetitive Surge Current | 40A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
