SB80W10T-H
| Parameters | |
|---|---|
| Current - Reverse Leakage @ Vr | 100μA @ 50V |
| Voltage - Forward (Vf) (Max) @ If | 800mV @ 3A |
| Forward Current | 8A |
| Max Reverse Leakage Current | 100μA |
| Operating Temperature - Junction | -55°C~150°C |
| Max Surge Current | 40A |
| Output Current-Max | 4A |
| Application | GENERAL PURPOSE |
| Max Reverse Voltage (DC) | 100V |
| Average Rectified Current | 8A |
| Number of Phases | 1 |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Peak Non-Repetitive Surge Current | 40A |
| Diode Configuration | 1 Pair Common Cathode |
| Max Forward Surge Current (Ifsm) | 40A |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Surface Mount | NO |
| Number of Pins | 3 |
| Diode Element Material | SILICON |
| Packaging | Bulk |
| Published | 2006 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | Rectifier Diodes |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
See Relate Datesheet
