SBL850
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Number of Pins | 2 |
| Weight | 6.000006g |
| Diode Element Material | SILICON |
| Packaging | Tube |
| Published | 2010 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Additional Feature | FREE WHEELING DIODE, LOW POWER LOSS |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 500μA @ 50V |
| Voltage - Forward (Vf) (Max) @ If | 700mV @ 8A |
| Case Connection | CATHODE |
| Forward Current | 8A |
| Operating Temperature - Junction | -65°C~150°C |
| Output Current-Max | 8A |
| Application | EFFICIENCY |
| Forward Voltage | 700mV |
| Max Reverse Voltage (DC) | 50V |
| Average Rectified Current | 8A |
| Number of Phases | 1 |
| Peak Reverse Current | 500μA |
| Max Repetitive Reverse Voltage (Vrrm) | 50V |
| Peak Non-Repetitive Surge Current | 200A |
| Max Forward Surge Current (Ifsm) | 200A |
| Height | 8.89mm |
| Length | 10.4mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
