SBR20100CTE
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Weight | 2.084002g |
| Diode Element Material | SILICON |
| Packaging | Tube |
| Published | 2010 |
| Series | SBR® |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Solder |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Subcategory | Rectifier Diodes |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | SBR20100CT |
| Pin Count | 3 |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Element Configuration | Dual |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Super Barrier |
| Current - Reverse Leakage @ Vr | 100μA @ 100V |
| Voltage - Forward (Vf) (Max) @ If | 820mV @ 10A |
| Forward Current | 20A |
| Operating Temperature - Junction | -65°C~150°C |
| Application | GENERAL PURPOSE |
| Forward Voltage | 820mV |
| Max Reverse Voltage (DC) | 100V |
| Average Rectified Current | 10A |
| Number of Phases | 1 |
| Peak Reverse Current | 100μA |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Peak Non-Repetitive Surge Current | 180A |
| Diode Configuration | 1 Pair Common Cathode |
| Reverse Voltage (DC) | 100V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
