SBSS84LT1G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 225mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 225mW |
| Turn On Delay Time | 3.6 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 10 Ω @ 100mA, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 36pF @ 5V |
| Current - Continuous Drain (Id) @ 25°C | 130mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 10V |
| Rise Time | 9.7ns |
| Drain to Source Voltage (Vdss) | 50V |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 1.7 ns |
| Turn-Off Delay Time | 12 ns |
| Continuous Drain Current (ID) | -130mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -50V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.11mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
