Parameters | |
---|---|
Number of Elements | 1 |
Power Dissipation-Max | 1W Ta |
Element Configuration | Single |
Power Dissipation | 1W |
Turn On Delay Time | 5.3 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 241m Ω @ 750mA, 4.5V |
Vgs(th) (Max) @ Id | 1.4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 1.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 1.7nC @ 4.5V |
Rise Time | 9.7ns |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±10V |
Fall Time (Typ) | 14 ns |
Turn-Off Delay Time | 16 ns |
Continuous Drain Current (ID) | 1.5A |
Gate to Source Voltage (Vgs) | 10V |
Drain to Source Breakdown Voltage | 20V |
Height | 560μm |
Length | 1.6mm |
Width | 1.5mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Surface Mount | YES |
Number of Pins | 6 |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e6 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Pin Count | 6 |