Parameters | |
---|---|
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Surface Mount | YES |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
JESD-609 Code | e6 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Pin Count | 6 |
Number of Elements | 1 |
Power Dissipation-Max | 1W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1W |
Turn On Delay Time | 8.8 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 84m Ω @ 1.5A, 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 405pF @ 6V |
Current - Continuous Drain (Id) @ 25°C | 3A Ta |
Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 4.5V |
Rise Time | 80ns |
Drain to Source Voltage (Vdss) | 12V |
Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
Vgs (Max) | ±10V |
Fall Time (Typ) | 50 ns |
Turn-Off Delay Time | 41 ns |
Continuous Drain Current (ID) | 3A |
Gate to Source Voltage (Vgs) | 10V |
Drain Current-Max (Abs) (ID) | 3A |
Drain-source On Resistance-Max | 0.084Ohm |
Height | 560μm |
Length | 1.6mm |
Width | 1.5mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |