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SCH1331-TL-W

ON SEMICONDUCTOR SCH1331-TL-W MOSFET Transistor, P Channel, -3 A, -12 V, 0.064 ohm, -4.5 V, -1.3 V


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-SCH1331-TL-W
  • Package: SOT-563, SOT-666
  • Datasheet: PDF
  • Stock: 114
  • Description: ON SEMICONDUCTOR SCH1331-TL-W MOSFET Transistor, P Channel, -3 A, -12 V, 0.064 ohm, -4.5 V, -1.3 V (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2013
JESD-609 Code e6
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin/Bismuth (Sn/Bi)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8.8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 84m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 405pF @ 6V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 4.5V
Rise Time 80ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 41 ns
Continuous Drain Current (ID) 3A
Threshold Voltage -1.3V
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.084Ohm
DS Breakdown Voltage-Min 12V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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