Parameters | |
---|---|
Vgs(th) (Max) @ Id | 1.3V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 6V |
Current - Continuous Drain (Id) @ 25°C | 1.6A Ta |
Gate Charge (Qg) (Max) @ Vgs | 1.6nC @ 4.5V |
Rise Time | 17.5ns |
Drain to Source Voltage (Vdss) | 12V |
Mounting Type | Surface Mount |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±10V |
Package / Case | SOT-563, SOT-666 |
Surface Mount | YES |
Fall Time (Typ) | 16.5 ns |
Number of Pins | 6 |
Turn-Off Delay Time | 16 ns |
Continuous Drain Current (ID) | 1.6A |
Gate to Source Voltage (Vgs) | 10V |
Operating Temperature | 150°C TJ |
Radiation Hardening | No |
Packaging | Tape & Reel (TR) |
RoHS Status | RoHS Compliant |
Published | 2008 |
Lead Free | Lead Free |
JESD-609 Code | e6 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Terminal Finish | Tin/Bismuth (Sn/Bi) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Pin Count | 6 |
Number of Elements | 1 |
Power Dissipation-Max | 800mW Ta |
Element Configuration | Single |
Power Dissipation | 800mW |
Turn On Delay Time | 4.9 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 215m Ω @ 800mA, 4.5V |