SCH2080KEC
| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Operating Temperature | 175°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | SiCFET (Silicon Carbide) |
| Max Output Current | 2A |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Interface | On/Off |
| Power Dissipation-Max | 262W Tc |
| Element Configuration | Single |
| Output Configuration | High Side |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 262W |
| Turn On Delay Time | 37 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 117m Ω @ 10A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 4.4mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1850pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 106nC @ 18V |
| Rise Time | 33ns |
| Drain to Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On,Min Rds On) | 18V |
| Vgs (Max) | +22V, -6V |
| Fall Time (Typ) | 28 ns |
| Turn-Off Delay Time | 70 ns |
| Continuous Drain Current (ID) | 40A |
| Threshold Voltage | 2.8V |
| Gate to Source Voltage (Vgs) | 22V |
| Drain to Source Breakdown Voltage | 1.2kV |
| Pulsed Drain Current-Max (IDM) | 80A |
| Max Junction Temperature (Tj) | 175°C |
| Nominal Vgs | 4 V |
| Height | 25.83mm |
| Length | 15.9mm |
| Width | 20.95mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
See Relate Datesheet
