SCT10N120
| Parameters | |
|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Tube |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Technology | SiCFET (Silicon Carbide) |
| Base Part Number | SCT10 |
| Power Dissipation-Max | 150W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 690m Ω @ 6A, 20V |
| Vgs(th) (Max) @ Id | 3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 400V |
| Current - Continuous Drain (Id) @ 25°C | 12A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On,Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Continuous Drain Current (ID) | 12A |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
