Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Operating Temperature | 175°C TJ |
Packaging | Tube |
Published | 2012 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Resistance | 280mOhm |
Technology | SiCFET (Silicon Carbide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Power Dissipation-Max | 108W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 19 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 364m Ω @ 4A, 18V |
Vgs(th) (Max) @ Id | 4V @ 1.4mA |
Input Capacitance (Ciss) (Max) @ Vds | 667pF @ 800V |
Current - Continuous Drain (Id) @ 25°C | 14A Tc |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 18V |
Rise Time | 19ns |
Drain to Source Voltage (Vdss) | 1200V |
Drive Voltage (Max Rds On,Min Rds On) | 18V |
Vgs (Max) | +22V, -6V |
Fall Time (Typ) | 29 ns |
Turn-Off Delay Time | 47 ns |
Continuous Drain Current (ID) | 14A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 22V |
Drain to Source Breakdown Voltage | 1.2kV |
Nominal Vgs | 4 V |
Height | 5.03mm |
Length | 15.9mm |
Width | 20.95mm |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |