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SCT2280KEC

MOSFET N-CH 1200V 14A TO-247


  • Manufacturer: ROHM Semiconductor
  • Nocochips NO: 687-SCT2280KEC
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 828
  • Description: MOSFET N-CH 1200V 14A TO-247 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature 175°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 280mOhm
Technology SiCFET (Silicon Carbide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 108W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 364m Ω @ 4A, 18V
Vgs(th) (Max) @ Id 4V @ 1.4mA
Input Capacitance (Ciss) (Max) @ Vds 667pF @ 800V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 18V
Rise Time 19ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 18V
Vgs (Max) +22V, -6V
Fall Time (Typ) 29 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 14A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 22V
Drain to Source Breakdown Voltage 1.2kV
Nominal Vgs 4 V
Height 5.03mm
Length 15.9mm
Width 20.95mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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